Gallium phosphide (GaP) is a semiconductor material that has garnered significant interest for its potential applications in optoelectronics and photovoltaics. The growth of GaP on silicon (Si ...

SOME interesting properties of gallium phosphide have been studied in polycrystalline specimens kindly provided by H. Welker, of Seimens Schuckertwerke, Erlangen. Etching of the surface has ...

A group of scientists led by the Universidad Complutense de Madrid in Spain has fabricated an intermediate band (IB) solar cell based on gallium phosphide (Gap) and titanium (Ti) for the first time.

In a world-first, researchers at the Universidad Complutense de Madrid in Spain have fabricated an intermediate band (IB) ...

The cell relies on a top cell based on gallium indium phosphide (GaInP), a middle cell relying on gallium indium arsenide phosphide (GaInAsP), and a silicon bottom cell. In the paper “Wafer ...