Gallium phosphide (GaP) is a semiconductor material that has garnered significant interest for its potential applications in optoelectronics and photovoltaics. The growth of GaP on silicon (Si ...
In a world-first, researchers at the Universidad Complutense de Madrid in Spain have fabricated an intermediate band (IB) ...
A group of scientists led by the Universidad Complutense de Madrid in Spain has fabricated an intermediate band (IB) solar cell based on gallium phosphide (Gap) and titanium (Ti) for the first time.
gallium phosphide, gallium selenide and indium gallium arsenide. They will also apply to six germanium products: germanium dioxide, germanium epitaxial growth substrate, germanium ingot ...