Several foundries continue to develop new processes based on next-generation gate-all-around transistors, including more advanced high-mobility versions, but bringing these technologies into ...

Carbon nanotube (CNT) transistors are essentially gate-all-around (GAA) field-effect transistors (GAA FETs) that can be ...

To further improve the control of the transistor channel, engineers found a way to replace the vertical fin with a stack of horizontal sheets, creating a new concept called gate-all-around ...

One of the key areas of research has been the performance of junctionless transistors made from different materials. For instance, studies have shown that β-Ga2O3 gate-all-around nanowire ...

Several foundries are ramping up their new 5nm processes in the market, but now customers must decide whether to design their next chips around the current transistor type or move to a different one ...

A type of 3D FinFET transistor from Intel introduced in 2011 with its Ivy Bridge microarchitecture. The Tri-Gate design is considered 3D because the gate wraps around a raised source-to-drain ...

While older planar transistors could be thought of as largely 2d structures, FinFET’s are three dimensional. This means that the whole vertical fin can act as a gate, greatly reducing leakage.