快科技12月26日消息，据媒体报道，在国际微电子领域顶级学术会议IEDM第70届年度会议上，来自中国的浙江驰拓科技发布了一项突破性的SOT-MRAM（自旋 ...

SOT-MRAM（自旋轨道矩磁性随机存取存储器）以其纳秒级写入速度和无限次擦写次数，是一种有望替代CPU各级缓存的高性能非易失存储技术，有望解决 ...

在国际微电子领域顶级学术会议IEDM第70届年度会议上，来自中国的浙江驰拓科技发布了一项突破性的SOT-MRAM（自旋轨道矩磁性随机存取存储器）技术进展，解决了该技术在大规模生产中面临的主要挑战。 驰拓科技首次提出了适合大规模制造的无轨道垂直型SOT-MRAM ...

Aside from existing non-volatile memory technology like One-Time-Programmable memory (OTP), Multiple-Time-Programmable memory (MTP) and Flash memory (Flash), emerging non-volatile memories such as ...

浙江驰拓科技在国际微电子领域顶级学术会议上，发布了一项突破性的SOT-MRAM技术进展。这项技术解决了SOT-MRAM在大规模生产中面临的挑战。 驰拓 ...

Magnetoresistive Random Access Memory (MRAM) is part of the next generation of storage devices expected to meet these needs. Researchers at the Advanced Institute for Materials Research (WPI-AIMR) ...

GRENOBLE, France, June 16, 20006-- Crocus Technology, a company focusing on Magnetic Random Access Memories (MRAM), today announced the closing of its Series A round of funding totaling $17 million.

Everspin Technologies, Inc. engages in the provision of magnetoresistive random access memory (MRAM) solutions. Its products include Toggle MRAM, Spin-transfer Torque MRAM, TMR Sensors ...

The work was published in Nature Communications on October 10, 2024. Magnetic random access memory (MRAM) represents the next generation of memory technology, combining the strengths of NAND flash ...

We demonstrated high TMR effect, which is prerequisite for MRAM, using novel metastable body-centered cubic (bcc) Co-Mn-Fe in a previous report [T. Ichinose et al. Journal of Alloys and Compounds ...