Researchers in Japan have developed a low power ME MRAM to reduce the energy consumption of memory systems particularly for ...

为减少面积和能耗，STT-MRAM已成为替代基于SRAM的最后一级高速缓存存储器的有希望的候选者。STT-MRAM器件的核心元件是磁隧道结，其中薄介电层夹在磁固定层和磁自由层之间。通过利用注入磁隧道结的电流切换自由磁层的磁化来执行存储单元的写入。 2018年12月3日 ...

Following that, we discuss the development of the magnetic random access memory (MRAM) technology, in which the magnetic tunnel junction serves as both the storage device and the storage sensing ...

It becomes more difficult to retain the data in floating-gates and thus requires more process steps and more masks to construct a robust memory cell structure. Therefore, emerging technologies like ...

By comparing the performance of Spin-Transfer Torque MRAM (STT-MRAM), Spin-Orbit Torque MRAM (SOT-MRAM), and SRAM in the multi-core environment, an quad-core CPU system with a three-tier cache ...

MRAM, however, uses magnetic states to store ... The research team tackled this challenge by creating a specialized layered structure combining a magnetic material called Co2FeSi with a ...

“As MRAM devices rely on a non-volatile magnetization state rather than a volatile charge state in capacitors, they are a promising alternative to DRAM in terms of their low power consumption in the ...