IEEE6 个月
GaN High Electron Mobility Transistor Device Technology for RF and High‐Power Applications
The High Electron Mobility Transistors (HEMTs) are the highest capable devices for millimeter ... In the last few decades various HEMTs device structures have been adopted to enhance the DC and RF ...
RF Globalnet7 年
LDMOS RF Power Transistor Line
The UPF18060 discrete RF power transistor is designed with UltraGOLDII LDMOS technology ... The UPF18060 industry standard discrete power transistor will be available in December with a standard ...
Design-Reuse10 年
The Challenges and Benefits of Analog/Mixed-Signal and RF System Verification above the ...
an extremely important common reference between the two levels of abstraction is the testbench. Tools for ASI-level verification must therefore assist designers to maintain consistent testbenches ...