By creating a new kind of transistor using an ultrathin ferroelectric material made from boron nitride, the team used its ...
Their diamond transistor requires six volts to switch on, more than twice the voltage compared to previous diamond transistors, while still delivering high current when activated. They also improved ...
A key finding was the exceptionally fast switching times exhibited by the nanomembrane-based thermal transistor. With switching times of around 500 ms, the device outperformed previous three ...
It has been developed in a 150nm pseudomorphic High Electron Mobility Transistor (pHEMT ... The RF switch delivers low insertion loss, high isolation, fast switching times, and high linearity ...