DIFFUSION of cadmium-115 into gallium arsenide has been examined by a method identical to that described by us 1 in the case of zinc-65. The cadmium was diffused from a saturated vapour into a ...

In 2001, Motorola developed a technique that places a spongy layer between gallium arsenide and silicon on the same wafer. Combining these two materials yields a higher-speed product at a lower cost.

Gallium Arsenide (GaAs) technology has been pervasive in semiconductor technology where power, speed, and reliability are necessary. Electrostatic discharge (ESD) in GaAs technology is important due ...

Abstract: Abrupt monocrystalline junctions between two different semiconductor materials (heterojunctions) 1 have been made by depositing germanium epitaxially on gallium arsenide substrates. The ...

A Belgian-Canadian research team claims to have found a way to develop gallium arsenide (GaAs) solar cells at a lower cost while maintaining high power conversion efficiencies. The scientists said ...

The charge removal is limited by the carrier mobility and the thickness of the I-layer necessary to support a moderate breakdown voltage (i.e., 30-100 volts). Gallium Arsenide has several advantages ...

An international research group has utilized a new porosification technique to build gallium arsenide (GaAs) solar cells that allow the recovery of germanium films. The new cell achieved an efficiency ...