传统的闪存会导致启动时间延迟。 从闪存到MRAM：任务成功的关键 为FPGA设计电路或应用时，需要使用硬件描述语言（HDL）来描述FPGA内部的功能应如何布线。HDL代码使用FPGA开发软件（如Lattice Radiant™）编译成FPGA配置文件，即位流。位流包含二进制数据，告诉FPGA ...

快科技12月26日消息，据媒体报道，在国际微电子领域顶级学术会议IEDM第70届年度会议上，来自中国的浙江驰拓科技发布了一项突破性的SOT-MRAM（自旋 ...

Fabricated using a 22-nm process, the microcontroller unit (MCU) test chip includes a 10.8-megabit (Mbit) embedded MRAM memory cell array. It achieves a random read access frequency of over 200 MHz ...

2024-12-27 19:25发布于安徽半导体行业观察官方账号 SOT-MRAM（自旋轨道矩磁性随机存取存储器）以其纳秒级写入速度和无限次擦写次数，是一种有望替代 ...

Aside from existing non-volatile memory technology like One-Time-Programmable memory (OTP), Multiple-Time-Programmable memory (MTP) and Flash memory (Flash), emerging non-volatile memories such as ...

Everspin Technologies, Inc. engages in the provision of magnetoresistive random access memory (MRAM) solutions. Its products include Toggle MRAM, Spin-transfer Torque MRAM, TMR Sensors ...

Spin-transfer-torque magnetic random access memory (STT-MRAM) — the most advanced of these emerging technologies for solid-state non-volatile memory — is about to hit the market. This Nature ...