然而，事情并非如此简单：为了在SiC制造领域站稳脚跟，就必须拥有专门用于SiC的昂贵设备。SiC晶圆的生长温度超过2700℃，生长速度至少比Si慢200倍，这就需要大量的能量。另一方面，GaN在很大程度上可以使用与Si半导体制程相同的设备，GaN外延 ...

Rohm Semiconductor, a leading Japanese electronics company, is poised to incur a consolidated net loss of JPY6 billion (US$39 million) for fiscal year 2024 (April 2024 - March 2025), marking its ...

The Royal Opera House Muscat’s Folk Music Festival (ROHM) presented the Omani Folk Ensemble with guests from Bulgaria, South Korea, and India in a two-day performance. The 90-minute program was well ...

Strong demand from the power device market, particularly SiC power devices for EVs, boosts Onto's growth, supported by advanced metrology and inspection technologies. Onto's comprehensive product ...

初学MSP430F5529 如何进行通用I/O口的设置 模拟集成电路 STM32 最大数组能开多大的 【allegro】求问铺铜的时候怎么让单个元件十字 ...

价格的变化，带来了一场激光雷达的普及风暴，2023年，配备激光雷达技术的新车比前四年加起来还要多，其中中国车企起到了举足轻重的作用，根据Yole Group的分析师预测 ... 半导体领域的氮化镓（GaN）和碳化硅（SiC）同样经历了漫长的发展期，虽然早在20世纪 ...