Noise modeling in semiconductor field-effect transistors (FETs), particularly metal-oxide-semiconductor field-effect transistors (MOSFETs), is a critical area of research as devices continue to ...
One significant area of research has been the development of electrothermal models for semiconductor switches, such as insulated gate bipolar transistors (IGBTs). A recent study proposed a model ...
“In this roadmap we consider the status and challenges of technologies that use the properties of a rectifying metal-semiconductor interface, known as a Schottky barrier (SB), as an asset for device ...
Abstract: Numerical modeling of the electrical behavior of semiconductor devices is playing an increasingly important role in their development. Examples that pertain to advanced MOSFETs and bipolar ...
Abstract: This study proposes improved compact models for impact ionization in the intrinsic and drift regions of Laterally-Diffused-Metal-Oxide-Semiconductor (LDMOS ... Therefore, we also introduce a ...
A semiconductor device controlled by fluctuations in an electric field is called a field-effect transistor or FET. The term "CMOS" often specifically refers to the layered physical structure of ...
"This perspective was further explored in our recent work on future transistors, where we collaborated with leading experts from the semiconductor industry to highlight the potential of ...
With the slowdown of Moore’s Law, more compute power will not be achieved by just increasing transistor density ... complex supply chain business model. The supply chain for 3D hybrid packages will be ...
This foundation model represents a significant leap forward in semiconductor manufacturing and design, with early deployments demonstrating unprecedented yield improvements.